Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure
Description
This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect tran- sistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).
Resources
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Description |
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2010_PHM_MOSFET.pdf |
https://c3.nasa.gov/dashlink/static/media/publication/2010_PHM_MOSFET.pdf |