Description
The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P- (or N-) doped amorphous silicon layer (13) and a second N- (or P-) doped amorphous silicon layer (14), in crystallizing, at least partly, the at least one first layer (13) using a technology for crystallizing silicon by pulsed electronic beam.
Resources
| Name | Format | Description | Link |
|---|---|---|---|
| Official Data Source | HTML | Access the complete Patent AT-E400900-T1: [Translated] METHOD FOR PRODUCING A PHOTOVOLTAIC CELL BASED ON THIN FILM SILICON on the official website. | Open resource |