Description
The present invention relates to a process for reducing the mobility of an semiconductor (OSC) layer in an electronic device, which has a semiconducting channel area, in specific areas outside said channel area by applying an oxidzing agent to the OSC layer.
Resources
| Name | Format | Description | Link |
|---|---|---|---|
| Official Data Source | HTML | Access the complete Patent AT-E400067-T1: [Translated] ORGANIC FIELD EFFECT TRANSISTOR AND PRODUCTION THEREOF on the official website. | Open resource |