Acceleration Research on Novel Photovoltaic Materials

Data and Simulation definiton file for SCAPS1D simulation that are the basis for figures 3-5 of publication DOI:10.1039/d2fd00085g, published in Faraday Discussions (2022) Device structure for the drift-diffusion simulation is:  metal back-contact/p-type absorber(1 micron)/n-type buffer layer (30nm)/i-ZnO(80nm)/n-type ZnO(100nm) No interface recombination and no back contact recombination is assumed.