Deliverable 1.3 Growth of hBN via CVD as a high-mobility substrate

The growth of hBN is explored via CVD on Ni, using a tubular reactor and ammonia borane as precursors. The parameter space was explored and hBN was successfully grown. This deliverable reports the recipe and growth of hBN via CVD, and a complete and extensive characterization with Optical Microscopy (OM), X-Ray Photoelectron Spectroscopy (XPS), Electron Energy Loss Spectra (EELS) and Transmission Electron Microscopy (TEM). Two different 10x10mm2 samples from different areas of a 4’ wafer sample were analysed by OM and XPS, and two other areas where transferred to TEM grids for TEM characterization (4 samples in total with complementary techniques).