Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

Description

Dataset for GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell to be published (link pending).   All measurements, unless stated otherwise, were taken at Instituto de energía solar, Universidad Politécnica de Madrid (IES-UPM). Detailed description of the data can be found in the headers of individual files. Fig2a_illuminated_IV.xlsx: Current-voltage characteristics of the prototype when illuminated with simulated AM1.5G. Fig2d_e_S4_S5_EQE.xlsx: External quantum efficiencies of prototype and test device, measured before and after deposition of anti-reflection coating. Fig3_IIVV.txt: Current-voltage characteristic of prototype when both junctions are measured simultaneously (AM1.5G). Fig4e_IV.xlsx: Current-Voltage characteristics of devices with or without compensated base contact under illumination, measured in a probe station and after wirebonding. Fig5a_illuminated_IV.xlsx: Current-voltage characteristics of the test device when illuminated at AM1.5G. FigS1b_SIMS.xlsx: Doping profiles measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd). FigS6_EQE_using_solar_simulator_LEDs.xlsx: External quantum efficiencies of the prototype, measured using single channels of the LED- solar simulator. Both junctions of the prototype were measured with the other junction in open and short circuit. FigS7_dark_IV.xlsx: Current-voltage characteristics of the prototype in the dark. FigS8_SIMS.xlsx: Doping profiles of a sample containing the compensated contact measured with secondary ion mass spectroscopy by Loughborough Surface Analysis Limited (LSA Ltd). FigS9_IIVV.txt: Current-voltage characteristic of the test device when both junctions are measured simultaneously (AM1.5G).   Junction areas of prototype [mm²]: Illuminated: Top junction: 1.02 (\pm)0.06 Bottom junction: 1.57 (\pm)0.11 Dark: Top junction: 1.16 (\pm)0.05 Bottom junction: 1.93 (\pm)0.10 Junction areas of test device [mm²]: Illuminated: Top junction: 2.84 (\pm)0.12 Bottom junction: 3.32 (\pm)0.12 Dark: Top junction: 3.28 (\pm)0.10 Bottom junction: 4.01 (\pm)0.09

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