Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging
Description
Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).
Resources
| Name |
Format |
Description |
Link |
|
57 |
|
https://data.nasa.gov/download/7wwx-fk77/application/zip |
|
57 |
IGBTAgingData_04022009.zip |
https://data.nasa.gov/docs/legacy/IGBTAgingData_04022009.zip |
Tags
- accelerated-aging
- semiconductor
- prognostics
- degradation
- transistor
- phm
- igbt
- insulated-gate-bipolar-transistor