Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging

Description

Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).

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Name Format Description Link
IGBTAgingData_04022009.zip ZIP IGBTAgingData_04022009.zip Open resource
Zip File ZIP Open resource

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