Description
Data for publication "High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing" by Hongling Lott, Andrea T. Mathew, Matt R. Young, Alexander Goldstone, Anthony Rice, Matthew O. Reese, and Eric Colegrove for publication in APL Materials.
Resources
| Name | Format | Description | Link |
|---|---|---|---|
| This is the figure of Figure 5. It is plotted with Igor Pro and the file can be opened with Igor Pro. Raw data is uploaded separately. | Binary | This is the figure of Figure 5. It is plotted with Igor Pro and the file can be opened with Igor Pro. Raw data is uploaded separately. | Open resource |
| SIMS profiles of samples used in the paper. With and without Cd overpressure and rapid thermal processing at different temperatures (labeled). Data were used for Figure S1 and Figure 4. | Binary | SIMS profiles of samples used in the paper. With and without Cd overpressure and rapid thermal processing at different temperatures (labeled). Data were used for Figure S1 and Figure 4. | Open resource |
| Staircase raw data for figure 2 and figure 3 | Binary | Staircase raw data for figure 2 and figure 3 | Open resource |
| Figure 4 – Representative SIMS depth profiles of As for two different growth conditions. | Unknown | Figure 4 – Representative SIMS depth profiles of As for two different growth conditions. | Open resource |
| Figure S2 -- Charge carrier mobility vs RTP temperature for samples shown in Figure 5. | Unknown | Figure S2 -- Charge carrier mobility vs RTP temperature for samples shown in Figure 5. | Open resource |
| Figure 2 – SIMS depth profile and associated deposition conditions for “staircase” structures. | Binary | Figure 2 – SIMS depth profile and associated deposition conditions for “staircase” structures. | Open resource |
| Figure S1 -- SIMS measurements of As concentration for different post processing temperatures for different growth conditions. | Binary | Figure S1 -- SIMS measurements of As concentration for different post processing temperatures for different growth conditions. | Open resource |
| Figure 3 – As incorporation vs growth conditions. | Binary | Figure 3 – As incorporation vs growth conditions. | Open resource |
| Figure 4 – Representative SIMS depth profiles of As for two different growth conditions. Insets: X-ray diffraction (XRD) ω-rocking curves of the CdTe(422) reflection from each as deposited sample, indicating the crystalline quality. The full width at half maximum (FWHM) was 96″ for the Cd-overpressure sample and 89″ for the no-Cd-overpressure sample. | Binary | Figure 4 – Representative SIMS depth profiles of As for two different growth conditions. Insets: X-ray diffraction (XRD) ω-rocking curves of the CdTe(422) reflection from each as deposited sample, indicating the crystalline quality. The full width at half maximum (FWHM) was 96″ for the Cd-overpressure sample and 89″ for the no-Cd-overpressure sample. | Open resource |