| Name |
Format |
Description |
Link |
|
0 |
Figure 4 – Representative SIMS depth profiles of As for two different growth conditions. |
https://data.nrel.gov/system/files/293/1747869211-BKM%20SIMS%20plots.pxp |
|
5 |
Figure 2 – SIMS depth profile and associated deposition conditions for “staircase” structures. |
https://data.nrel.gov/system/files/293/1747869211-Raw%20Staircase%20Plots.pxp |
|
5 |
Figure S1 -- SIMS measurements of As concentration for different post processing temperatures for different growth conditions. |
https://data.nrel.gov/system/files/293/1747869211-SIMS%20Series.pxp |
|
5 |
Figure 3 – As incorporation vs growth conditions. |
https://data.nrel.gov/system/files/293/1747869211-Staircase%20summary%20plots_0.pxp |
|
5 |
Figure 4 – Representative SIMS depth profiles of As for two different growth conditions. Insets: X-ray diffraction (XRD) ω-rocking curves of the CdTe(422) reflection from each as deposited sample, indicating the crystalline quality. The full width at half maximum (FWHM) was 96″ for the Cd-overpressure sample and 89″ for the no-Cd-overpressure sample. |
https://data.nrel.gov/system/files/293/1747869211-XRD.pxp |
|
0 |
Figure S2 -- Charge carrier mobility vs RTP temperature for samples shown in Figure 5. |
https://data.nrel.gov/system/files/293/1747869211-Mobility%20Plot.pxp |
|
5 |
SIMS profiles of samples used in the paper. With and without Cd overpressure and rapid thermal processing at different temperatures (labeled). Data were used for Figure S1 and Figure 4. |
https://data.nrel.gov/system/files/293/1747869211-As%20incorporation%20comparison.xlsx |
|
5 |
Staircase raw data for figure 2 and figure 3 |
https://data.nrel.gov/system/files/293/1747869211-As%20Staircase%20raw%20data%20for%20Igor.xlsx |
|
5 |
This is the figure of Figure 5. It is plotted with Igor Pro and the file can be opened with Igor Pro. Raw data is uploaded separately. |
https://data.nrel.gov/system/files/293/1747869211-Activation_ASI.pxp |