Data for "Distributed contactless interconnects for millimeter-wave heterogeneous integration"

Description

Included here are figures and other relevant data from the paper "Distributed contactless interconnects for millimeter-wave heterogeneous integration", submitted to TMTT Letters. Abstract: State-of-the-art integrated circuits leverage dissimilar materials to optimize system performance. Such heterogeneous integration often involves multiple chips electrically coupled to one another via bump bonds or wire-bond interconnects. While these interconnects are a mature technology for low-frequency operation (< 100 GHz), they have stringent fabrication requirements and are prone to failure during operation in the terahertz range (300 GHz to 10 THz). Next-generation integrated circuits require alternative interconnect topologies that are less sensitive to fabrication tolerances and conditions, are more robust, and have superior high-frequency performance. Here, we demonstrate distributed coupling to 325 GHz between broadside-coupled coplanar waveguides without bump bonds, wire bonds, or direct metal-to-metal bonding. The insertion loss of these contactless interconnects was approximately 1.4 dB at the maximum in the passbands at 63 GHz, 93 GHz, and 120 GHz. This interconnect topology enables robust integration of low-cost silicon with high-speed compound semiconductors for terahertz communications networks to improve reliability and increase yield.

Resources

Name Format Description Link
47 A txt document detailing the specifics of this dataset https://data.nist.gov/od/ds/mds2-2777/README.txt
48 . Simulated and experimentally measured transmission (S_12, (a)) and reflection (S_11, (b)) coefficients for interconnect test structures with coupling lengths l_c equal to (top row) 500 ?m, (middle row) 250 ?m, and (bottom row) 125 ?m. The maximum simulated transmission in each passband is indicated by the blue circular marker in (a). The dashes lines in (a) represent the net insertion loss of the transmission line regions and therefore set an upper bound on the transmission of the back-to-back configuration. https://data.nist.gov/od/ds/mds2-2777/Fig3.tif
53 Measured and simulated scattering parameter data for interconnects in a back-to-back condiguration. https://data.nist.gov/od/ds/mds2-2777/Figure_3_Data.xlsx
48 . Fabrication process flow for the interconnect test structures investigated in this work. Side view perspectives are cross-sections of the dashed vertical line in the corresponding plan view. Micrographs are optical microscope images of the interconnect test structure at each fabrication step. https://data.nist.gov/od/ds/mds2-2777/Fig2.tif

Tags

  • terahertz
  • electronics
  • amplifier
  • on-wafer
  • frequency-combiner
  • photomixers
  • frequency-comb
  • microwave

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