| Name |
Format |
Description |
Link |
|
8 |
Data used in Fig. 7 (bottom) of [1].Setup B, Chip B: Logarithmic magnitude of the transmission coefficients for Chip B's CPW models (|Sn,model,21|, dashed) and the proposed MISL-calibrated measurements (|Sn,MISL,21|, solid), using weights that prioritize transmission accuracy. The uncertainty for each state is represented by a shaded area in different colors. S0,model is shown in white for visual distinction. Bottom: CPW with JJs. S21 for resistive states (n > 0) is decreased compared to without JJs due to higher DC resistance from the JJs and increased use of the 200 nm thick base electrode (see Fig. 3). |
https://data.nist.gov/od/ds/mds2-3603/Fig7bottom_SetupB_CPWwithJJs.csv |
|
8 |
Data used in Fig. 5 of [1].Extracted frequency-dependent distributed circuit parameters R′ and L′ for DC resistances of Chip A in Setup A (see Table I), obtained from 2D quasi-static EM simulations incorporating the CPW geometry and material properties, with associated k = 2 uncertainties (shaded areas). C′ = (148.67 ± 2.52) pF/m for the uniform CPWs at all frequencies. |
https://data.nist.gov/od/ds/mds2-3603/Fig5Resistance_Inductance_Data.csv |
|
8 |
Data used in Fig. 7 (top) of [1].Setup B, Chip B: Logarithmic magnitude of the transmission coefficients for Chip B's CPW models (|Sn,model,21|, dashed) and the proposed MISL-calibrated measurements (|Sn,MISL,21|, solid), using weights that prioritize transmission accuracy. The uncertainty for each state is represented by a shaded area in different colors. S0,model is shown in white for visual distinction. Top: CPW without JJs. S21 for resistive states (n > 0) is primarily set by the 650 nm Nb wiring layer's DC resistance. |
https://data.nist.gov/od/ds/mds2-3603/Fig7top_SetupB_CPWwithoutJJs.csv |
|
8 |
Data used in Fig. 6 (middle) of [1].Setup A, Chip A: Comparison of S-parameters for Chip A's CPW models (Sn,model), SOLR-calibrated measurements (Sn,SOLR), and the proposed MISL-calibrated measurements (Sn,MISL), using weights that prioritize transmission accuracy. Temperature-dependent resistivity variations in the 650 nm Nb wiring layer define seven distinct impedance states. The uncertainty for each state is represented by a shaded area in different colors. For the top and middle plots, S0,model is shown in white for visual distinction. Middle: Linear magnitude of S11. |
https://data.nist.gov/od/ds/mds2-3603/Fig6middle_SetupA_CPWwithoutJJs.csv |
|
8 |
Data used in Fig. 8 of [1].Setup B, Chip B: Frequency dependence of the difference in |S21| between two states with nearly identical DC resistance but different heating mechanisms. S21 10K: Cryostat at 10 K with 85 mA DC current, 88.5 Ohms DC resistance. S21 25K: Cryostat at 25 K with 1 mA DC current, 88.47 Ohms DC resistance. |
https://data.nist.gov/od/ds/mds2-3603/Fig8TempTestData.csv |
|
47 |
Readme for the navigation, organization, and content for the data in the figures included in the Cryogenic On-Chip In Situ S-Parameter Calibration Using Superconducting Coplanar Waveguides manuscript. |
https://data.nist.gov/od/ds/mds2-3603/README.txt |
|
8 |
Data used in Fig. 6 (bottom) of [1].Setup A, Chip A: Comparison of S-parameters for Chip A's CPW models (Sn,model), SOLR-calibrated measurements (Sn,SOLR), and the proposed MISL-calibrated measurements (Sn,MISL), using weights that prioritize transmission accuracy. Temperature-dependent resistivity variations in the 650 nm Nb wiring layer define seven distinct impedance states. The uncertainty for each state is represented by a shaded area in different colors. Bottom: Upper bound of the linear magnitude difference between SOLR- and MISL-calibrated S-parameters for all n. |
https://data.nist.gov/od/ds/mds2-3603/Fig6bottom_SetupA_CPWwithoutJJs.csv |
|
8 |
Data used in Fig. 6 (top) of [1].Setup A, Chip A: Comparison of S-parameters for Chip A's CPW models (Sn,model), SOLR-calibrated measurements (Sn,SOLR), and the proposed MISL-calibrated measurements (Sn,MISL), using weights that prioritize transmission accuracy. Temperature-dependent resistivity variations in the 650 nm Nb wiring layer define seven distinct impedance states. The uncertainty for each state is represented by a shaded area in different colors. For the top and middle plots, S0,model is shown in white for visual distinction. Top: Logarithmic magnitude of S21 for states n = 0, 2, 4, 6 (selected for visual clarity). |
https://data.nist.gov/od/ds/mds2-3603/Fig6top_SetupA_CPWwithoutJJs.csv |