Broadband Electromagnetic Properties of Engineered Flexible Absorber Materials

Description

Figures and relevant data from the paper "Broadband Electromagnetic Properties of Engineered Flexible Absorber Materials" are found here . The paper was published on Advanced Materials Technologies in 2023. ABSTRACT: Flexible and stretchable materials have attracted significant interest for applications in wearable electronics and bioengineering fields. Recent developments also incorporate mounted and embedded microwave circuits, components, and systems with engineered flexible materials that operate over a broadband frequency range (~1 to 100 GHz). Here we demonstrate a simple, low-cost, flip-chip technique where flexible materials are placed on top of coplanar waveguide (CPW) transmission lines for material property measurement. We apply on-wafer error correction and de-embedding techniques to determine broadband electromagnetic properties of the material-loaded transmission line segments. Finite-element simulations of material-loaded devices were employed along with the broadband measurements to estimate the electromagnetic material properties. To demonstrate this technique, we fabricated flexible polydimethylsiloxane (PDMS) composites with varying concentrations of Barium Hexaferrite (BaM) nanoparticles for potential applications in electromagnetic shielding and quantified the complex permittivity and permeability of the composites up to 110 GHz using our broadband scattering-parameter measurements. We fit the frequency-dependent permeability to models describing the ferromagnetic resonance of barium hexaferrite (BaM) nanoparticles in PDMS and estimated the constituent nanoparticle properties using the Maxwell-Garnett mixing model. This study paves way to exploit a wide range of engineered materials in flexible, wearable, and biomedical electronics applications and presents a convenient methodology to extract important broadband electromagnetic properties for applications such as electromagnetic shielding.

Resources

Name Format Description Link
Figure 1: Reference chip, air and composite loaded test chips subject to measurement. PNG PDMS composites with 30% and 60% (weight ratio) barium hexaferrite were directly placed on test chips with CPWs for flip chip measurements. The Reference die is used for on-wafer calibration with necessary devices to perform multiline through-reflect-line (mTRL) and series resistor calibration [Orloff2011]. Test chip has 8 identical transmission lines of 11 mm. Schematic diagrams of the top-view and cross section of the composite (superstrate) loaded transmission line are shown on the bottom and right-hand of the image. Open resource
Figure 2: Frequency dependent R, L, C, G (per unit length) transmission line model that is used for simulations and calculations PNG The image depicts the electric field vectors for gold transmission lines on quartz substrate that are exaggerated for clarity (Image not to scale). The fields emanate from the signal line and ends on ground planes. Open resource
Differential substrate capacitance vs. substrate permittivity CSV The impact of substrate and superstrate material properties on CPW transmission line capacitance, inductance, and resistance calculated from finite-element simulations. Open resource
Differential superstrate capacitance vs. superstrate permittivity CSV The impact of substrate and superstrate material properties on CPW transmission line capacitance, inductance, and resistance calculated from finite-element simulations. Open resource
Differential inductance vs. superstrate permeability CSV The impact of substrate and superstrate material properties on CPW transmission line capacitance, inductance, and resistance calculated from finite-element simulations. Open resource
Figure 4: Material loaded transmission lines and de-embedding in test wafer PNG The cables and probes from the vector network analyzer (VNA) are connected to the reference plane during measurement. The TRL calibration procedure translates 50 Ohm reference plane to probe pads. The air-loaded distance (L) of the transmission line is de-embedded to obtain RLCG distributed circuit parameters for BaM material loaded CPW space. Open resource
Calculated and measured distributed circuit parameters - Inductance per unit length CSV Figure%205a.csv Open resource
Calculated and measured distributed circuit parameters - Resistance per unit length CSV Figure%205b.csv Open resource
Frequency dependence of the capacitance per unit length CSV Frequency dependence for the bare test chip (air), two PDMS samples, three 30% BaM samples, and the BaM 60% sample. These values are obtained by fixing RL and optimizing CG to fit the measured, de-embedded data. The conductance is negligible when compared to capacitance values. Open resource
Frequency dependence of the conductance per unit length (LDUT) CSV Frequency dependence for the bare test chip (air), two PDMS samples, three 30% BaM samples, and the BaM 60% sample. These values are obtained by fixing RL and optimizing CG to fit the measured, de-embedded data. The conductance is negligible when compared to capacitance values. Open resource
Calculated real effective permittivity (εeff) vs. frequency CSV Real permittivity for two PDMS samples, three 30% BaM samples, and the BaM 60% sample. Open resource
Calculated imaginary effective permittivity (εeff) vs. frequency CSV Imaginary permittivity for two PDMS samples, three 30% BaM samples, and the BaM 60% sample. Open resource
Calculated and extracted real part of effective permeability for samples CSV Calculated effective permeability (μeff) vs. frequency for three 30% BaM samples, and the BaM 60% sample. Open resource
Calculated and extracted imaginary part of effective permeability for samples CSV Calculated effective permeability (μeff) vs. frequency for three 30% BaM samples, and the BaM 60% sample. Open resource
Estimates for the free-space attenuation constant for engineered BaM-PDMS composites CSV Figure%209.csv Open resource
Readme File for Figures with Description Text README.txt Open resource

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